?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 HAA1037(pnp) general purpose transistor r f ? ? m e c r eplace m f eatures ? ? complm e m aximum r e lectrica parameter collector-ba s collector-em emitter-base collector cut - emitter cut- o dc current g collector-em transition f r e collector ou t c lassific a rank rang e parameter collector-ba s collector-em emitter-base collector cu r collector po w junction t em storage tem p m ent type fe linearity . e nts the hac 2 r at i n gs (t a l char ac t s e breakdow n itter breakdo w breakd own v - off current o ff current g ain itter saturatio n e quency t put capac ita n a tion of h f s e vo ltage itter voltage vol tage r rent-conti nu o w er dissipatio n perature p erature : 2sa103 7 . 2 412 a = 25c unl e t eristics ( voltage w n voltage v oltage n vol tage n ce f e o us n e ss other w i s ( t a = 25c u n symbol v cbo v ceo v ebo i cbo i ebo h fe v ce(sat ) f t c ob 12 symbol v cbo v ceo v ebo i c p c t j t stg s e no t ed) n less othe r w test conditi o i c =-50 a,i e = 0 i c =-1ma,i b =0 i e =-50ua,i c = 0 v cb =-60v ,i e = 0 v eb =-6v,i c =0 v ce =-6v,i c =- 1 i c =-50ma,i b = - v ce =-12v ,i c = - v cb =-12v ,i e = 0 q 0-270 valu e -60 -50 -6 -150 200 150 -55 to +150 w ise noted ) o ns 0 0 0 1 ma - 5ma - 2ma, f =30m h 0 , f =1mhz unit v v v ma mw c c mi n -6 0 -5 0 -6 12 0 h z r 180-390 s n typ 0 0 0 140 4.0 s ot-23 max -0.1 -0.1 560 -0.5 5.0 s 270-560 unit v v v a a v mhz pf marking fq fr fs 1: base 2:e mitter 3: collector excellent h
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HAA1037(pnp) general purpose transistor typical characteristics -0.1 -1 -10 - 100 -200 -400 -600 -800 -0.1 -1 -10 1 10 100 -1 -10 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 -0.1 -1 -10 - 100 -200 -400 -600 -800 -1000 -1 -10 -1 00 -0 -50 -100 -150 -200 -1 -10 -100 10 100 1000 -0 -2 -4 -6 -8 -0 -2 -4 -6 -8 -10 -12 v be comm o n emitter v ce =-6v t a =100 t a =25 base-emit t er voltage v be (mv) collcetor current i c (ma) c ib c ob f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib out put capacitance c ob / c ib (pf) collecto r-base voltage v cb / v eb (v) -0.3 i c i c f t transi tion frequency f t (mhz) collector current i c (ma) -50 v ce = -12v t a =25 p c t a collecto r power dissipation p c (mw) ambient t emperature t a ( ) =10 t a =25 t a =100 base-emitter saturation voltage v be (sat) (m v) collector current i c (ma) i c v besat i c v cesat collector-emitter saturation voltag e v ce sa t (mv) collector current i c (ma) =10 t a =25 t a =100 common emitter t a =25 -200 t a =100 t a =25 i c collector current i c (ma) dc current gain h fe common emitter v ce =-6v h fe -50ua -45ua -40ua -35ua -30ua -25ua -20ua -15ua -20 -10ua i b =-5ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v)
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HAA1037(pnp) general purpose transistor sot-23 package outline dimensions dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e 0.950 ty p 0.037 ty p e1 1.800 2.000 0.071 0.079 l 0.550 r e f 0.022 r e f l1 0.300 0.500 0.012 0.020 0 8 0 8
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HAA1037(pnp) general purpose transistor sot-23 embossed carrier tape sot-23 tape leader and traller sot-23 reel dimensions are in millimeter reel option d d1 d2 g h i w1 w2 7 dia 178 54.40 13.00 r78 r25.60 r6.50 9.50 12.3 0 tolerance 2 1 1 1 1 1 1 1 dimensions are in millimeter type a b c d e f p0 p p1 w sot-23 3.15 2.77 1.22 1.50 1.75 3.50 4.00 4.00 2.0 0 8.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
|
